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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

n channel mosfet transistor

high voltage transistor

Place of Origin:

ShenZhen China

Brand Name:

Hua Xuan Yang

Certification:

RoHS、SGS

Model Number:

G170C03LR1S

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Product Details
Product Name:
Mos Field Effect Transistor
Feature:
Fast Switching Time
V DS:
30V
9.5 A:
(Vgs= 10V)
12.9 MΩ:
(Vgs= 10V)
19.3 MΩ:
(Vgs= 4.5V)
Payment & Shipping Terms
Minimum Order Quantity
Negotiation
Price
Negotiated
Packaging Details
Boxed
Delivery Time
1 - 2 Weeks
Payment Terms
L/C T/T Western Union
Supply Ability
18,000,000PCS / Per Day
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Product Description

Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

 

Mos Field Effect Transistor Description

 

Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names.

 

Mos Field Effect Transistor Feature 

 

N- Channel P - Channel
Vds = 30V Vds = -30V
9.5 A (Vgs= 10V) - 8 A (Vgs= -10V)
12.9 mΩ (Vgs= 10V) 21.6 mΩ (Vgs= -10V)
19.3 mΩ (Vgs= 4.5V) 40.0 mΩ (Vgs= -4.5V)
 100% Avalanche Tested
 Reliable and Rugged
 Halogen Free and Green Devices Available
(RoHS Compliant)

 

Mos Field Effect Transistor Applications

 

Synchronous Rectifiers
Wireless Power
H-bridge Motor Drive

 

Ordering and Marking Information

 

S
G170C03
XYMXXXXXX

Package Code
S: SOP8L
Date Code
XYMXXXXXX

 

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines
“Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-
oduct and/or to this document at any time without notice.

 

Absolute Maximum Ratings

 

Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor 0

 

N-Mosfet Typical Operating Characteristics

 

Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor 1

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