Place of Origin:
ShenZhen China
Brand Name:
OTOMO
Certification:
RoHS、SGS
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET
General Description
VDSS= V ID= 6.0 A z 20 |
G1 6 |
D1,D2 5 |
G2 4 |
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z |
RDS(on) < Ω@V = 4.5V 25m GS |
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z |
RDS(on) < Ω@V = 2.5V 32m GS |
1 2 3 S1 D1,D2 S2 |
FEATURE
z TrenchFET Power MOSFET
z Excellent RDS(on)
z Low Gate Charge
z High Power and Current Handing Capability
z Surface Mount Package
APPLICATION
z Battery Protection
z Load Switch
z Power Management
Parameter Symbol Test Condition Min Typ Max Unit |
STATIC CHARACTERICTISCS |
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 19 V |
Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 1 µA |
Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA |
Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.5 0.9V |
Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A 10 S |
Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 1.2 V |
DYNAMIC CHARACTERICTISCS (note4) |
Input Capacitance Ciss 800 pF |
Output Capacitance Coss VDS =8V,VGS =0V,f =1MHz 155 pF |
Reverse Transfer Capacitance Crss 125 pF |
SWITCHING CHARACTERICTISCS (note 4) |
Turn-on delay time td(on) 18 ns |
Turn-on rise time tr VDD=10V,VGS=4V, 5 ns |
Turn-off delay time td(off) ID=1A,RGEN=10Ω 43 ns |
Turn-off fall time tf 20 ns |
Total Gate Charge Qg 11 nC |
Gate-Source Charge Qgs VDS =10V,VGS =4.5V,ID=4A 2.3 nC |
Gate-Drain Charge Qgd 2.5 nC |
Notes :
1. Repetitive rating:Pluse width limited by maximum junction temperature
2. Surface Mounted on FR4 board,t≤10 sec.
3. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.
SOT-23-6L Package Outline Dimensions
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