Name: 8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
Brand: OTOMO
SKU: OTOMO
Rating: 5 (153 reviews)

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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

Dual N Channel Mosfet Power Transistor

Mosfet Power Transistor 20V

Mosfet Power Transistor Low Gate Charge

Place of Origin:

ShenZhen China

Brand Name:

OTOMO

Certification:

RoHS、SGS

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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

Product Details

Model Number:

8H02ETS

Product Name:

Mosfet Power Transistor

VDSS:

6.0 A

APPLICATION:

Power Management

FEATURE:

Low Gate Charge

Power Mosfet Transistor:

SOT-23-6L Plastic-Encapsulate

Payment & Shipping Terms

Minimum Order Quantity

1000-2000 PCS

Price

Negotiated

Packaging Details

Boxed

Delivery Time

1 - 2 Weeks

Payment Terms

L/C T/T Western Union

Supply Ability

18,000,000PCS / Per Day

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Product Description

20V N+N-Channel Enhancement Mode MOSFET

DESCRIPTION

The 8H02ETSuses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V.

GENERAL FEATURES

VDS = 20V,ID = 7A

8H02TS RDS(ON) < 28mΩ @ VGS=2.5V

RDS(ON) < 26mΩ @ VGS=3.1V

RDS(ON) < 22mΩ @ VGS=4V

RDS(ON) < 20mΩ @ VGS=4.5V

ESD Rating:2000V HBM

Application

Battery protection

Load switch Power management

8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge 0

Package Marking and Ordering Information

Product ID	Pack	Marking	Qty(PCS)
8H02ETS	TSSOP-8	8H02ETS WW YYYY	5000/3000

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)

Parameter	Symbol	Limit	Unit
Drain-Source Voltage	VDS	20	V
Gate-Source Voltage	VGS	±12	V
Drain Current-Continuous@ Current-Pulsed (Note 1)	ID	7	V
Maximum Power Dissipation	PD	1.5	W
Operating Junction and Storage Temperature Range	TJ,TSTG	-55 To 150	℃
Thermal Resistance,Junction-to-Ambient (Note 2)	RθJA	83	℃/W

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge 1

NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Tags：

8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

Dual N Channel Mosfet Power Transistor

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Mosfet Power Transistor Low Gate Charge

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Dual N Channel Mosfet Power Transistor