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MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

tip series transistors

high power pnp transistor

Place of Origin:

ShenZhen China

Brand Name:

OTOMO

Certification:

RoHS、SGS

Model Number:

MJE13003

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Product Details
Type:
Triode Transistor
Material:
Silicon
Power Mosfet Transistor:
TO-126 Plastic-Encapsulate
Product Name:
Semiconductor Triode Type
Tj:
150℃
Payment & Shipping Terms
Minimum Order Quantity
1000-2000 PCS
Price
Negotiated
Packaging Details
Boxed
Delivery Time
1 - 2 Weeks
Payment Terms
L/C T/T Western Union
Supply Ability
18,000,000PCS / Per Day
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Product Description

TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN)

 

 

FEATURE
 

Ÿ Power Switching Applications

 

 

MARKING

MJE13003=Device code

Solid dot = Green molding compound device, if none, the normal device

MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type 0

 

MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type 1

 

 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
MJE13003 TO-126 Bulk 200pcs/Bag
MJE13003-TU TO-126 Tube 60pcs/Tube


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector -Base Voltage 600 V
VCEO Collector-Emitter Voltage 420 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 0.75 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 ~150

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 600     V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA,IB=0 400     V
Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 6     V
Collector cut-off current ICBO VCB=600V,IE=0     100 uA
Collector cut-off current ICEO VCE=400V,IB=0     100 uA
Emitter cut-off current IEBO VEB=7V,IC=0     10 uA
DC current gain hFE(1)* VCE=10V, IC=200mA 20   30  
hFE(2) VCE=10V, IC=250μA 5    
Collector-emitter saturation voltage VCE(sat)1 IC=200mA,IB=40mA     0.5 V
Base-emitter saturation voltage VBE(sat) IC=200mA,IB=40mA     1.1 V
Transition frequency fT VCE=10V, IC=100mA,f=1MHz 5     MHz
Fall time tf IC=100mA     0.5 μs
Storage time tS* IC=100mA 2   4

 

 
 TO-92 Package Outline Dimensions

 

 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 2.500 2.900 0.098 0.114
A1 1.100 1.500 0.043 0.059
b 0.660 0.860 0.026 0.034
b1 1.170 1.370 0.046 0.054
c 0.450 0.600 0.018 0.024
D 7.400 7.800 0.291 0.307
E 10.600 11.000 0.417 0.433
e 2.290 TYP 0.090 TYP
e1 4.480 4.680 0.176 0.184
h 0.000 0.300 0.000 0.012
L 15.300 15.700 0.602 0.618
L1 2.100 2.300 0.083 0.091
P 3.900 4.100 0.154 0.161
Φ 3.000 3.200 0.118 0.126

 

 

MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type 2

 

 

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