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3DD13005 Tip Power Transistors Switch Emitter Base Voltage 9V High Efficiency

3DD13005 Tip Power Transistors Switch Emitter Base Voltage 9V High Efficiency

3DD13005 Tip Power Transistors

9V Tip Power Transistors

700v Tip Power Transistors

Place of Origin:

ShenZhen China

Brand Name:

OTOMO

Certification:

RoHS、SGS

Model Number:

3DD13005

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Product Details
Collector-Base Voltage:
700v
Junction Temperature:
150 ℃
Emitter-Base Voltage:
9V
Product Name:
Semiconductor Triode Type
Collector Dissipation:
1.25W
Type:
Triode Transistor
Payment & Shipping Terms
Minimum Order Quantity
1000-2000 PCS
Price
Negotiated
Packaging Details
Boxed
Delivery Time
1 - 2 Weeks
Payment Terms
L/C T/T Western Union
Supply Ability
18,000,000PCS / Per Day
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Product Description

 

TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN)

 

FEATURE
 

Power Switching Applications

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current -Continuous 1.5 A
PC Collector Dissipation 1.25 W
TJ, Tstg Junction and Storage Temperature -55~+150

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO Ic= 1mA,IE=0 700     V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA,IB=0 400     V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9     V
Collector cut-off current ICBO VCB= 700V,IE=0     1 mA
Collector cut-off current ICEO VCE= 400V,IB=0     0.5 mA
Emitter cut-off current IEBO VEB= 9 V, IC=0     1 mA

 

DC current gain

hFE(1) VCE= 5 V, IC= 0.5 A 8   40  
  hFE(2) VCE= 5 V, IC= 1.5A 5      
Collector-emitter saturation voltage VCE(sat) IC=1A,IB= 250 mA     0.6 V
Base-emitter saturation voltage VBE(sat) IC=1A, IB= 250mA     1.2 V
Base-emitter voltage VBE IE= 2A     3 V

 

Transition frequency

 

fT

VCE=10V,Ic=100mA

f =1MHz

 

5

   

 

MHz

Fall time tf IC=1A,IB1=-IB2=0.2A VCC=100V     0.5 µs
Storage time ts IC=250mA 2   4 µs

 

 

CLASSIFICATION OF hFE1

Rank              
Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40

 

 

CLASSIFICATION OF tS

 

Rank A1 A2 B1 B2
Range 2-2.5 (μs ) 2.5-3(μs ) 3-3.5(μs ) 3.5-4 (μs )
         

 

 

 

TO-92 Package Outline Dimensions

 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min. Max. Min. Max.
A 4.470 4.670 0.176 0.184
A1 0.000 0.150 0.000 0.006
B 1.120 1.420 0.044 0.056
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
L 14.940 15.500 0.588 0.610
L1 4.950 5.450 0.195 0.215
L2 2.340 2.740 0.092 0.108
Φ
V 5.600 REF. 0.220 REF.

 

 

 

 

 

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