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600mA Silicon Power Transistor NPN Power Transistor High Current

600mA Silicon Power Transistor NPN Power Transistor High Current

600mA Silicon Power Transistor

Silicon Power Transistor High Current

NPN Power Transistor High Current

Place of Origin:

ShenZhen China

Brand Name:

OTOMO

Certification:

RoHS、SGS

Model Number:

A42

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Product Details
Collector-Base Voltage:
310V
Emitter-Base Voltage:
5V
Tstg:
-55~+150℃
Material:
Silicon
Collector Current:
600 MA
Payment & Shipping Terms
Minimum Order Quantity
1000-2000 PCS
Price
Negotiated
Packaging Details
Boxed
Delivery Time
1 - 2 Weeks
Payment Terms
L/C T/T Western Union
Supply Ability
18,000,000PCS / Per Day
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Product Description

SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN)

 

 

FEATURE
 

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

 

Marking :D965A

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 310 V
VCEO Collector-Emitter Voltage 305 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 200 mA
ICM Collector Current -Pulsed 500 mA
PC Collector Power Dissipation 500 mW
RθJA Thermal Resistance from Junction to Ambient 250 ℃/W
TJ Junction Temperature 150
Tstg Storage Temperature -55~+150

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 310     V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 305     V
Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5     V

 

Collector cut-off current

ICBO VCB=200V,IE=0     0.25 µA
 

 

ICEX

VCE=100V,VX=5V     5 µA
    VCE=300V,VX=5V     10 µA
Emitter cut-off current IEBO VEB=5V,IC=0     0.1 µA

 

DC current gain

hFE(1) VCE=10V, IC=1mA 60      
  hFE(2) VCE=10V, IC=10mA 100   300  
  hFE(3) VCE=10V, IC=30mA 75      
Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA     0.2 V
Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA     0.9 V
Transition frequency fT VCE=20V,IC=10mA, f=30MHz 50     MHz

 

 

 
 

 Typical Characteristics

 

600mA Silicon Power Transistor NPN Power Transistor High Current 0

600mA Silicon Power Transistor NPN Power Transistor High Current 1

600mA Silicon Power Transistor NPN Power Transistor High Current 2

 

 

 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 1.400 1.600 0.055 0.063
b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023
c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
D1 1.550 REF. 0.061 REF.
E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167
e 1.500 TYP. 0.060 TYP.
e1 3.000 TYP. 0.118 TYP.
L 0.900 1.200 0.035 0.047

 
 
600mA Silicon Power Transistor NPN Power Transistor High Current 3
 

 

SOT-89-3L Suggested Pad Layout

 

600mA Silicon Power Transistor NPN Power Transistor High Current 4
 
 
SOT-89-3L Tape and Reel
600mA Silicon Power Transistor NPN Power Transistor High Current 5
600mA Silicon Power Transistor NPN Power Transistor High Current 6
600mA Silicon Power Transistor NPN Power Transistor High Current 7
 
 
 

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