Brand Name:
ST
Model Number:
PD57018-E
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| Product name:PD57018-E |  |
| Manufacturer: STMicroelectronics | Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors |
| Transistor Polarity: N-Channel | Technology: Si |
| Id-Continuous Drain Current: 2.5 A | Vds-drain-source breakdown voltage: 65 V |
| Rds On-Drain Source On Resistance: 760 mOhms | Operating frequency: 1 GHz |
| Gain: 16.5 dB | Output power: 18 W |
| Minimum operating temperature: - 65 C | Maximum operating temperature: + 150 C |
| Installation style: SMD/SMT | Package/Case: PowerSO-10RF-Formed-4 |
| Package: Tube | Brand: STMicroelectronics |
| Channel Mode: Enhancement | Configuration: Single |
| Forward Transconductance - Min: 1 S | Height: 3.5 mm |
| Length: 7.5 mm | Moisture Sensitivity: Yes |
| Pd-Power Dissipation: 31.7 W | Product Type: RF MOSFET Transistors |
| Series: PD57018-E | Factory Packing Quantity: 400 |
| Subcategory: MOSFETs | Type: RF Power MOSFET |
| Vgs - Gate-Source Voltage: 20 V | Width: 9.4 mm |
| Unit weight: 3 g |
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